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发明公开
CN104711524A 离化率检测装置及方法 有权

离化率检测装置及方法
摘要：
本发明涉及一种离化率检测装置和方法，其包括离子沉积速率检测单元和总沉积速率检测单元；总沉积速率检测单元用于通过检测沉积在被加工工件上的薄膜厚度而获得溅射粒子的总沉积速率；离子沉积速率检测单元用于检测溅射粒子中离子的沉积速率，其包括导电金属片、隔离件、电流检测装置及直流电源；导电金属片置于被加工工件上；隔离件用以将导电金属片与外界电绝缘；隔离件的位于导电金属片上方的位置处设有竖直的通孔；直流电源用以向导电金属片加载负偏压；电流检测装置用于检测电路上的电流；根据电流进行计算而获得溅射粒子中离子的沉积速率，并通过计算溅射粒子的离子沉积速率与总沉积速率的比值而获得溅射粒子的离化率。
摘要（英）：

The invention relates to an ionization rate detection device and method. The device comprises an ion deposition rate detection unit and a total deposition rate detection unit. The total deposition rate detection unit is used for detecting the thickness of a film deposited on a processed workpiece to acquire the total deposition rate of sputtered particles; and the ion deposition rate detection unit is used for detecting the deposition rate of ions in sputtered particles, and comprises conductive metal sheets, a separator, a current detection apparatus and a direct current power supply. The conductive metal sheets are arranged on the processed workpiece, the separator is used for electric insulation of the conductive metal sheets from the outside and is provided with vertical through-holes above the conductive metal sheets, the direct current power supply is used for loading negative bias to the conductive metal sheets, and the current detection apparatus is used for detecting current on a circuit. The deposition rate of ions in sputtered particles can be calculated according to the current, and the ionization rate of sputtered particles can be obtained by calculating the ratio of ion deposition rate of sputtered particles to the total deposition rate.

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