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发明公开
CN104681503A 贯通电极基板和使用贯通电极基板的半导体装置 有权

贯通电极基板和使用贯通电极基板的半导体装置
摘要：
本发明提供一种贯通电极基板和使用贯通电极基板的半导体装置，在该贯通电极基板中，提高了将基板的表面和背面导通的导通部中的电特性。本发明的贯通电极基板(100)具备具有贯通表面和背面的贯通孔(104)的基板(102)；和填充在贯通孔(104)内并含有金属材料的导通部(106)，导通部(106)至少包含面积加权后的平均晶粒直径为13μm以上的金属材料。另外，导通部(106)包含晶粒直径为29μm以上的金属材料。此外，导通部的一端含有面积加权后的平均晶粒直径比13μm小的金属材料，导通部的另一端至少含有面积加权后的平均晶粒直径为13μm以上的金属材料。
摘要（英）：

Disclosed is a through electrode substrate comprising a conduction part extended from the obverse surface of the substrate to the reverse surface of the substrate, the conduction part having improved electric characteristics. Also disclosed is a semiconductor device using the through electrode substrate. A through electrode substrate (100) comprises a substrate (102) having a through-hole (104) extended from the obverse surface of the substrate to the reverse surface of the substrate, and a conduction part (106) comprising a metal material filled into the through-hole (104). The conduction part (106) comprises at least a metal material having an area weighed average grain diameter of not less than 13 [mu]m. Further, the conduction part (106) comprises a metal material having a grain diameter of not less than 29 [mu]m. One end of the conduction part comprises a metal material having an area weighed average grain diameter of less than 13 [mu]m, and the other end of the conduction part comprises at least a metal material having an area weighed average grain diameter of no less than 13[mu]m.

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