An apparatus (10) for producing an SiC single crystal is used for a solution growth method. This apparatus (10) for producing an SiC single crystal is provided with a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) is provided with a cylinder part (28A), a bottom part (28B) and a low-heat-conductive member (28C). The bottom part (28B) is positioned at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low-heat-conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than the thermal conductivity of the bottom part (28B). This production apparatus is capable of reducing variation in the temperature within a crystal growth surface of the SiC seed crystal.