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发明公开
CN103855132A 用于三维集成电路的装置和方法 有权

用于三维集成电路的装置和方法
摘要：
本发明公开了用于三维集成电路的装置和方法，其中，一种结构包括：衬底，包括位于衬底上的多条线；多个连接件，形成在半导体管芯的顶面上，半导体管芯形成在衬底上并通过多个连接件和形成在衬底顶面的角部处的伪金属结构连接至衬底，伪金属结构具有两个不连续部分。
摘要（英）：

The present invention discloses an apparatus and method for three dimensional integrated circuits. A structure comprises a substrate comprising a plurality of traces on top of the substrate, a plurality of connectors formed on a top surface of a semiconductor die, wherein the semiconductor die is formed on the substrate and coupled to the substrate through the plurality of connectors and a dummy metal structure formed at a corner of a top surface of the substrate, wherein the dummy metal structure has two discontinuous sections.

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