The invention discloses a method for manufacturing a polysilicon resistor in metal wolfram silicide gate electrode technology. The method comprises steps of: growing a polysilicon layer; carrying out comprehensive first ion implantation in order to make the resistance value of the polysilicon layer as the resistance value of the polysilicon resistor formed subsequently; using second ion implantation technology to dope the polysilicon layer in the forming area of the gate polysilicon; forming an oxide layer on the surface of the polysilicon layer; removing the oxide layer outside the forming area of the polysilicon resistor by using photoetching technology; growing metal wolfram silicide; simultaneously defining the forming area of a contact end of a gate electrode and the polysilicon resistor by using photoetching technology and photoresist; successively etching the metal wolfram silicide and the polysilicon layer by using the photoresist as a mask and simultaneously forming a gate electrode, the polysilicon resistor, and the contact end; and forming a metal contact hole. The method may decrease the resistance of the contact hole of the polysilicon resistor, improve the in-plane uniformity of the polysilicon resistor, and increase the precision of the polysilicon resistor.