The invention discloses a deep trench manufacturing method for improving a silicon wafer warping degree. The manufacturing method comprises the following steps that: (1), deep trench graphs of all structure units at a silicon wafer are exposed by using a photolithographic mask at the silicon wafer, wherein the deep trench graph in each structure unit is a rotational symmetrical graph and arrangement of all structure units at the silicon wafer are in a rotational symmetrical mode; (2), a deep trench with the designated depth and the designated feature size is manufactured by using a dry etching process; and (3), the deep trench is filled. According to the invention, on the basis of the shape changing of the deep trench graph and the utilization of the graph or combined graph with the rotational symmetrical property, the contact surface area of silicon wafers at the symmetrical direction are basically equal, thereby ensuring stress symmetrical distribution of all directions at the silicon wafer and ensuring prevention of too large stress at one certain direction. According to the method, the warping degrees of the silicon wafer at all direction are uniform, thereby substantially improving the warping degree of the silicon wafer.