The invention discloses a bulk-silicon MOSFET (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR) structure. The bulk-silicon MOSFET structure comprises a p+ layer (2) and an n- layer (3), wherein the p+ layer (2) and the n- layer (3) are directly contacted; the n- layer is made of wide-bandgap 6H-SiC material. The bulk-silicon MOSFET structure disclosed by the invention has the advantage that the radiation resistance of the bulk-silicon structure is improved. Compared with the SOI (Silicon On Insulator) technology, the bulk-silicon MOSFET structure disclosed by the invention has the beneficial effects that the self-heating effect is improved, the total dosage effect is eliminated, and the cost is reduced.