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CN103014655A ECR-PEMOCVD低温沉积Ga、Al共同掺杂ZnO薄膜的制备方法 无效 - 驳回

ECR-PEMOCVD低温沉积Ga、Al共同掺杂ZnO薄膜的制备方法
摘要：
一种ECR-PEMOCVD低温沉积Ga、Al共同掺杂ZnO薄膜的制备方法，属于新材料沉积制备领域。本发明按照以下步骤进行：（1）将基片用丙酮、乙醇以及去离子水用超声波依次清洗后，用氮气吹干送入反应室；（2）将反应室抽真空至1.0×10-3Pa，将基片加热至20~600℃，向反应室内通入氩气携带的二乙基锌、氩气携带的三甲基镓、氩气携带的三甲基铝和氧气，氧气、二乙基锌、三甲基镓和三甲基铝流量比为（100~150）：（4~8）:（1~2）:1，由质量流量计控制；控制气体总压强为0.8~2.0Pa；在电子回旋共振频率为650W，反应30min~3h,得到Ga、Al共同掺杂ZnO光电透明导电薄膜。本发明的镓铝共同的掺杂ZnO的透明光电导电薄膜产品具有电阻率低，透光性能好、廉价、易于实现大面积生产的产业化的优势。
摘要（英）：

The invention relates to a preparation method of a Ga/Al-codoped ZnO film by ECR-PEMOCVD (electron cyclotron resonance-plasma-enhanced metal-organic chemical vapor deposition) low-temperature deposition, belonging to the field of new material deposition preparation. The method comprises the following steps: (1) sequentially carrying out ultrasonic cleaning on a substrate with acetone, ethanol and deionized water, blow-drying with nitrogen gas, and sending the substrate into a reaction chamber; (2) vacuumizing the reaction chamber to 1.0*10<-3>Pa, heating the substrate to 20-600 DEG C, introducing argon-carried diethyl zinc, argon-carried trimethyl gallium, argon-carried trimethyl aluminum and oxygen into the reaction chamber, wherein the oxygen-diethyl zinc-trimethyl gallium-trimethyl aluminum flow ratio is controlled by a mass flowmeter at (100-150):(4-8):(1-2):1, and the total gas pressure is controlled at 0.8-2.0Pa; and reacting for 30 minutes to 3 hours under the ECR frequency of 650W to obtain the Ga/Al-codoped ZnO photoelectric transparent conducting film. The Ga/Al-codoped ZnO transparent photoelectric conducting film product has the advantages of low resistivity, favorable light transmittance and low price, and can easily implement large-area industrialized production.

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