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发明公开
CN102956588A 具有穿衬底通孔的半导体器件 有权

具有穿衬底通孔的半导体器件
摘要：
本发明涉及一种具有在其中形成的穿衬底通孔的半导体器件。在一个或多个实施方式中，所述半导体器件包括利用构图的粘结材料接合在一起的顶部晶片和底部晶片。所述顶部晶片和所述底部晶片包括在其中形成的一个或多个集成电路。所述集成电路连接至配置在所述顶部和所述底部晶片的表面上的一个或多个导电层。形成贯穿所述顶部晶片和所述构图的粘结材料的过孔，使得可以在形成在所述顶部晶片中的所述集成电路与形成在所述底部晶片中的所述集成电路之间形成电互连。所述过孔包括在所述顶部与所述底部晶片之间提供电互连的导电材料。
摘要（英）：

The present invention relates to a SEMICONDUCTOR DEVICE HAVING a THROUGH-SUBSTRATE VIA, wherein the Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.

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