The invention discloses a readout circuit of an SRAM (Static Random Access Memory), which comprises an amplifying circuit module, a clamping circuit module, a push-pull circuit module, a selection output circuit module and an output circuit module, wherein the amplifying circuit module is used for amplifying and outputting data in an SRAM array block and comprises a sense amplifier, the SA input end of the sense amplifier is connected with a sense amplifier enable control signal and a sense amplifier selection signal, and drain electrodes of a first PMOS (P-channel Metal Oxide Semiconductor) tube and a second PMOS tube in which two SA output ends are located are respectively and commonly connected to a first output contact and a second output contact; the clamping circuit module is used for stretching the potential of the first output contact and the potential of the second output contact to low level before effective signals arrives; and the push-pull circuit module is used for performing adverse treatment on the potential of the first output contact and the potential of the second output contact and then selectively outputting the potential. The readout circuit of the SRAM improves the reading speed and the stability of a circuit and reduces the layout area of the circuit.