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发明公开
CN102473790A 光检测器 有权

光检测器
摘要：
光检测器(1)中，由低电阻Si基板(3)、绝缘层(4)、高电阻Si基板(5)及Si光电二极管(20)，构成相对于配置于凹部(6)内的InGaAs光电二极管(30)的气密密封封装，由低电阻Si基板(3)的电气通路部(8)及配线膜(15)，达成相对于Si光电二极管(20)及InGaAs光电二极管(30)的电性配线。然后，相对于Si光电二极管(20)的p型区域(22)设置于Si基板(21)的背面(21b)侧的部分，InGaAs光电二极管(30)的p型区域(32)设置于InGaAs基板(31)的表面(31a)侧的部分。
摘要（英）：

In a photodetector (1), a hermetically sealed package is formed by a low-resistance Si substrate (3), an insulation layer (4), a high-resistance Si substrate (5) and a Si photodiode (20) and is formed around an InGaAs photodiode (30), disposed in a recess (6). Electric wiring is provided to the Si photodiode (20) and the InGaAs photodiode (30) by means of a wiring film (15) and an electrical path (8) in the low resistance Si substrate (3). In the Si photodiode (20), a p-type region (22) is provided in a section of the rear surface (21b) side of a Si substrate (21), whereas in contrast, in the InGaAs photodiode (30), a p-type region (32) is provided in a section of the front surface (31a) side of an InGaAs substrate (31).

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