The invention provides a target power loading method for a magnetic control sputtering process, which comprises the following steps that: (10) a target is respectively connected with a main power supply and a maintenance power supply; and (20) a certain main power is loaded to the target by the main power supply in a pulse form, so that the maintenance power supply at least loads a certain maintenance power to the target during pulse interval time of the main power supply, the maintenance power is less than the main power, and further, the glow discharge process of the sputtering process is maintained during the pulse interval time of the main power. By the target power loading method disclosed by the invention, the stability and the controllability of the process are ensured, simultaneously, the metal ionization is remarkably improved, and further, the process requirements of the technical node are met. In addition, the invention also provides a target power supply which comprises a main power module and a maintenance power module, and semiconductor processing equipment which applies the target power loading method or the target power supply.