Provided is a laser processing method of sapphire substrates, comprising the steps of preparing sapphire substrate on which a plurality of lamination portions separated from each other are disposed; radiating short pulse laser beams from a laser light source; making the laser beam radiated by the laser light source traverse a light beam shaping component; adjusting a light-gathering unit or the position of the sapphire substrate, enabling the laser beam to be converged into the internal part of the sapphire substrate through the light-gathering unit; forming a phase change area in the sapphire substrate through making the laser beam irradiate the internal sapphire substrate. The laser beam is introduced into the sapphire substrate, and the phase change area is formed in the sapphire substrate, avoiding the area of the lamination portion.