Disclosed is a semiconductor encapsulation material which is characterized by being composed of a glass for metal coating having a strain point of not less than 480 DEG C, a temperature corresponding to the viscosity of 104 dPas of not more than 1100 DEG C, and a thermal expansion coefficient for the range of 30-380 DEG C of from 70 X 10-7/ DEG C to 110 X 10-7/ DEG C. The semiconductor encapsulation material does not contain an environmentally harmful substance, while having a high heat-resistant temperature of not less than 500 DEG C. In addition, the semiconductor encapsulation material is capable of encapsulating an easily oxidizable metal such as dumet.