The invention discloses an aluminum and boron common gettering method for a silicon wafer, which comprises the following steps of: preparing a boron-doped aluminum source; cleaning a silicon wafer; forming a boron-aluminum layer on the surface of the silicon wafer by utilizing a film plating technology; annealing at one step or multiple steps; and removing the surface layer of the silicon wafer. The invention utilizes the characteristic that the boron has higher solid solubility in silicon relative to aluminum, dopes the boron into the aluminum and dopes the boron into a heavy doped layer in the alloying process of the aluminum and silicon to obtain an aluminum-boron common gettering layer with high doping concentration. The aluminum and boron common gettering method of the invention can form the gettering layer which is deeper and even and has higher doping concentration at same annealing temperature and achieve the gettering effect of other processes at lower temperature and reduce the influence of high temperature on the performance of the silicon wafer. The aluminum and boron common getteirng method of the invention has the characteristics of low cost, easy operation and good gettering effect and has wider application prospect.