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发明公开
CN101944549A 台面型光电二极管及其制造方法 失效 - 权利终止

台面型光电二极管及其制造方法
摘要：
本发明提供一种台面型光电二极管及其制造方法。该台面光电二极管包括台面，台面的侧壁是在台面底部变宽的方向上倾斜的表面。用第一导电类型、第二导电类型、半绝缘型或未掺杂型的半导体层覆盖台面的至少侧壁。在台面的至少侧壁上生长半导体层。台面在上端部处的倾斜表面的倾斜角小于台面在下端部处的倾斜表面的倾斜角。
摘要（英）：

A mesa photodiode which includes a mesa, the sidewall of the mesa is a surface that is inclined in the direction in which the bottom of the mesa becomes wider. At least the sidewall of the mesa is covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type. The semiconductor layer is grown on at least the sidewall of the mesa. The inclined angle of the inclined surface of the mesa at the upper end portion is smaller than the inclined angle of the inclined surface of the mesa at the lower end portion.

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