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CN101937686B 非易失性存储器及其记录方法 失效 - 权利终止

非易失性存储器及其记录方法
摘要：
一种非易失性存储器及其记录方法，该非易失性存储器包括记录电路，该记录电路电执行信息存储器件的信息的记录，该信息存储器件具有被连接至用于信息记录的电源的电阻变化，该方法包括以下步骤：在信息存储器件的记录电路的输出阻抗大于信息存储器件的低电阻状态下的电阻值的条件下，通过记录电路记录低电阻状态下的信息；以及在信息存储器件的记录电路的输出阻抗小于信息存储器件的高电阻状态下的电阻值的条件下，通过记录电路记录在高电阻状态下的信息。
摘要（英）：

A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

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