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发明公开
CN101901756A 基于c面Al2O3衬底上极性c面GaN薄膜的MOCVD生长方法 有权 转让

基于c面Al2O3衬底上极性c面GaN薄膜的MOCVD生长方法
摘要：
本发明公开了一种基于c面A12O3衬底的极性c面GaN薄膜的生长方法，主要解决常规极性c面GaN材料生长中质量较差，应力大的问题。其生长步骤是：(1)将c面Al2O2衬底置于MOCVD反应室中，对衬底进行热处理；(2)在c面Al2O3衬底上生长厚度为100-300nm，温度为700℃的无应力AlInN成核层；(3)在所述低温无应力AlInN层之上生长厚度为1000-2000nm，温度为950-1100℃的GaN层；(4)在所述GaN层之上生长1-10nm的第一层TiN层；(5)在所述第一层TiN层之上生长厚度为2000-5000nm，温度为950-1100℃的极性c面GaN层；(6)在所述极性c面GaN层之上生长厚度1-10nm的第二层TiN层；(7)在所述第二层TiN层之上生长厚度为2000-5000nm，温度为950-1100℃的极性c面GaN层。本发明具有低缺陷，应力小的优点，可用于制作极性c面GaN发光二极管及晶体管。
摘要（英）：

The invention discloses a growing method of a polar c surface GaN film based on a c surface Al2O3 substrate, which mainly solves the problems of poor quality and large stress when the traditional polar c surface GaN film material grows. The growing method comprises the following steps of: (1) placing the c surface Al2O3 substrate into a MOCVD (metalorganic chemical vapor deposition) reaction chamber and treating the substrate by heat; (2) growing a unstressed AlInN nucleating layer with thickness of 100-300nm and temperature of 700 DEG C on the c surface Al2O3 substrate; (3) growing a GaN layer with thickness of 1,000-2,000nm and temperature of 950-1,100 DEG C on the low-temperature unstressed AlInN layer; (4) growing a first TiN layer of 1-10nm on the GaN layer; (5) growing a polar c surface GaN layer with thickness of 2,000-5,000nm and temperature of 950-1,100 DEG C on the first TiN layer; (6) growing a second TiN layer with thickness of 1-10nm on the polar c surface GaN layer; and (7) growing a polar c surface GaN layer with thickness of 2,000-5,000nm and temperature of 950-1,100 DEG C on the second TiN layer. The invention has low defects and low stress and can be used for preparing a c surface GaN light emitting diode and a transistor.

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