The invention relates to an N-type lateral insulated gate bipolar device capable of reducing hot carrier effect. The N-type lateral insulated gate bipolar device capable of reducing the hot carrier effect comprises a P-type substrate; buried oxide is arranged on the P-type substrate, and is provided with a P-type epitaxial layer; the P-type epitaxial layer is provided with an N-type well and a P-well area, the N-type well is provided with an N-type buffering well which is provided with a P-type positive area, and the P-well area is provided with an N-type negative area and a P-type body contact area; and a field oxide layer, a metal layer, a gate oxide layer, a polysilicon gate and an oxide layer are arranged on the upper surface of the device. The device is characterized in that a P-typeburied layer is arranged below the P-well area and above the buried oxide and is inserted into part of the P-type epitaxial layer to form a reversed L-type P-area together with the whole P-well area,and the structure can lead the hole current of the device to the bottom part so as to reduce the iron generation rate and longitudinal electric field in the channel area of the device and lower the temperature of thermion, thereby effectively inhibiting the hot carrier effect of the device.