Provided is a semiconductor device wherein breakage of an interlayer insulating film (12) and an electrode (13) due to bonding is eliminated, while ensuring bonding strength, and electrical characteristics are improved. A method for manufacturing such semiconductor device is also provided. A semiconductor element (1) mounted on the semiconductor device is provided with an interlayer insulating film (12) having an extending section (121), a connecting section (122) and an opening section (123). The extending section (121) covers a gate electrode (116) and extends in a first direction. The connecting section (122) connects, at fixed intervals in the first direction, the extending sections (121) which are adjacent to each other in a second direction. The opening section (123) has its openingshape defined by the extending section (121) and the connecting section (122) and exposes the main surface of a base region (112) and the main surface of an emitter region (113). A second width dimension (122W) in the first direction below the connecting section (122) is set larger than a first width dimension (121W) in the second direction in the emitter region (113) below the extending section (121) of the interlayer insulating film (12).