The invention relates to an N-type super-junction transverse double-diffusion semiconductor metallic oxide transistor which comprises a P-type substrate, wherein a super-junction structure and a P-type body region are arranged on the P-type substrate; the super-junction structure consists of an N-type region and a P-type region which are connected to the direction of a source region and a drain region and distributed at intervals; an N-type source region, a P-type body contact region and a gate oxide layer are arranged above the P-type body region, and an N-type drain region is arranged abovethe super-junction structure; a first type field oxide layer is arranged in a region beyond the N-type drain region above the super-junction structure; a polysilicon gate is arranged above the gate oxide layer; a second type field oxide layer is arranged above the N-type resource region, the P-type body contact region, the N-type drain region, the polysilicon gate and the first type field oxide layer; and the N-type source region, the N-type drain region, the P-type body contact region and the polysilicon gate are all connected with a metal lead passing through the second type field oxide layer. The transistor is characterized in that the P-type substrate is internally provided with an N-type buffer region which is arranged below the P-type region in the super-junction structure and connected with the bottom of the P-type region in the super-junction structure.