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发明授权
CN101710607B 一种聚合物薄膜热贴合方法及其在顶栅有机场效应晶体管中的应用 失效 - 权利终止

一种聚合物薄膜热贴合方法及其在顶栅有机场效应晶体管中的应用
摘要：
本发明公开了一种在有机半导体薄膜上制备聚合物绝缘薄膜的方法。该方法包括下述步骤：1)在亲水性基片表面制备聚合物薄膜，然后将所述亲水性基片浸入水中，水侵入所述聚合物薄膜与所述亲水性基片之间，使所述聚合物薄膜从所述亲水性基片表面剥落，并自发铺展于水的表面，将所述聚合物薄膜从水的表面转移到框架上，并将支撑着所述聚合物薄膜的框架放入烘箱，使所述聚合物薄膜烘干；2)使有机半导体薄膜表面与所述高分子聚合物薄膜表面相接触，并将它们置于烘箱中，在真度为0.001Kpa-1Kpa的条件下进行加热，冷却至室温后将薄膜取出，即在有机半导体薄膜表面制备得到高分子聚合物薄膜。采用上述方法可以最大程度上降低顶层绝缘层构建对有机半导体薄膜的负面作用，提高顶栅OFET的性能。
摘要（英）：

The invention discloses a method for preparing a polymer insulating film on an organic semiconductor film. The method comprises the following steps: 1) preparing a polymer film on the surface of a hydrophilic substrate, then soaking the hydrophilic substrate into water, immersing the water between the polymer film and the hydrophilic substrate to ensure that the polymer film is peeled off from the surface of the hydrophilic substrate and is automatically spread on the surface of the water, transferring the polymer film to a frame from the surface of the water, and putting the frame supporting the polymer film into an oven to dry the polymer film; and 2) contacting the surface of the organic semiconductor film with the surface of the polymer film, placing the films into the oven, heating the films with a vacuum degree of 0.001 to 1Kpa, and cooling the film to room temperature and then taking the film out so as to obtain the polymer film on the organic semiconductor film. The method can furthest reduce the negative effect of a top insulating layer structure on the organic semiconductor film, and improve the OFET performance of a top grate.

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