The invention discloses a method for preparing crystallographic orientation semiconductor substrate, which comprises the following steps: providing a bonding substrate comprising a stripping layer, a first semiconductor layer and a corrosion stop layer; providing a second semiconductor support substrate, the surface of which is provided with a second crystal face; forming a medium layer on the first semiconductor layer or on the surface of the second semiconductor support substrate, or forming a medium layer on both the first semiconductor layer and the surface of the second semiconductor support substrate; bonding the second semiconductor support substrate with the bonding substrate; removing the stripping layer and the corrosion stop layer by a selective corrosion process; and annealingbonded substrate. The invention has the advantage that an overall mixed crystal orientation silicon substrate can be prepared by using high temperature annealing to remove a native oxide layer of a bonded interface which is caused by hydrophilic bonding, and the surface semiconductor layer of the overall mixed crystal orientation silicon substrate has good thickness uniformity.