知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN101477948B 制造包括纵向晶体管的半导体器件的方法 失效 - 权利终止

制造包括纵向晶体管的半导体器件的方法
摘要：
本发明公开一种制造包括纵向晶体管的半导体器件的方法，该方法包括：在半导体基板上沉积n层(此处，n是在2至6范围内的整数)掩模薄膜；在所述n层掩模薄膜上形成光阻图案；使用所述光阻图案作为蚀刻掩模蚀刻所述掩模薄膜，直到第m层(此处，m＝n-1)掩模薄膜暴露出来而形成沟槽为止；将绝缘膜填充到所述沟槽中；移除所述绝缘膜周围的第n层掩模薄膜以形成绝缘膜图案；以及使用所述绝缘膜图案作为蚀刻掩模将剩余的m层掩模薄膜图案化，直到所述半导体基板暴露出来为止。
摘要（英）：

A method for manufacturing a semiconductor device including a vertical transistor comprises: depositing a n-layered (here, n is an integer ranging from 2 to 6) mask film over a semiconductor substrate; forming a photoresist pattern over the n-layered mask film; etching the mask film with the photoresist pattern as an etching mask until the mth layer (here, m=n-1) mask film is exposed to form a trench; filling an insulating film in the trench; removing the mask film of the insulating film to form an insulating film pattern; and patterning the mth layer mask film with the insulating film pattern as an etching mask until the semiconductor substrate is exposed.

公开/授权文献
0/0