The invention discloses a shallow groove insulation shaping process, which comprising an active area liner oxidation and silicon nitride deposition; a dielectric antireflection film deposition, an active area liner oxidation layer, a dielectric antireflection film and an active area etching; wherein, the active area etching is soft etching and a gradient is formed on the active area so that a gradient is formed in the active area. The process also comprises an oxidation, deposition and etching of a supporting part; STI etching; oxidation of the insulation layer in the groove inner wall and iron oxidation deposition with a high density. By adopting the technology proposal in the invention, the gradient is formed through the soft etching in the active area, and a round apex angle is evenly obtained easily in the forming process of the STI etching. Thus avoiding the difficult STI etching steps in the prior arts and a plurality of the Liner Oxidation steps to save the cost and improve the production efficiency as well.