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发明公开
CN101202100A 组合存储单元 有权

组合存储单元
摘要：
一种组合存储单元，包括静态随机存取存储单元及掩膜式只读存储编码器，静态随机存取存储单元包括第一与第二反相器，第一反相器包括第一P型金属氧化物半导体晶体管与第一N型金属氧化物半导体晶体管，第二反相器包括一第二P型金属氧化物半导体晶体管与一第二N型金属氧化物半导体晶体管，掩膜式只读存储编码器与该第一与第二P型金属氧化物半导体晶体管的源极耦接或与该第一与第二N型金属氧化物半导体晶体管的源极耦接，并决定存储单元为随机存取存储模式或只读存储模式。
摘要（英）：

The invention relates to a combined memorizing unit, comprising a static random access memorizing unit and a mask style read-only memorizing coder. The static random access memorizing unit comprises a first inverter and a second inverter. The first inverter comprises a first P type metal oxide semiconductor transistor and a first N type metal oxide semiconductor transistor. The second inverter comprises a second P type metal oxide semiconductor transistor and a second N type metal oxide semiconductor transistor. The mask style read-only memorizing coder is coupled with source poles of the first and second P type metal oxide semiconductor transistors or with source poles of the first and second N type metal oxide semiconductor transistors and determines whether the memorizing unit is the random access memorizing mode or the read-only memorizing mode.

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