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CN101158028A 一种多晶掺钼氧化锌透明导电薄膜的制备方法 无效 - 撤回

一种多晶掺钼氧化锌透明导电薄膜的制备方法
摘要：
本发明属透明导电薄膜技术领域，具体为一种多晶掺钼氧化锌透明导电薄膜的制备方法。其步骤为：以锌钼金属镶嵌靶为靶材，以普通玻璃为基板，基板温度为100－300℃，通过反应直流磁控溅射法，使Ar离子束轰击靶材，将靶材溅射，溅射电流150－300mA，溅射电压100－400V，反应室内的工作压强为0.45－2.5Pa，O2反应气体的分压百分含量P(O2)＝Po2/(Po2+PAr)为4.0～10.0％，溅射时间40－100分钟。形成具有多晶结构的掺钼氧化锌透明导电薄膜。薄膜厚度为100－250nm。本发明制备的薄膜具有低电阻率和可见光范围高的光学透明性及高载流子迁移率的特性。本发明方法具有工业生产前景，工艺稳定性好，是一种制备ZMO透明导电氧化物薄膜保证薄膜所制器件优良性能的新方法。
摘要（英）：

The invention belongs to the transparent conductive film technical field, in particular to a preparation method of a polycrystalline molybdenum doped zinc oxide transparent conductive film. The steps of the method are that: a zinc inlay molybdenum target is taken as a target and ordinary glass is taken as substrate, the substrate temperature is 100-300 DEG C, through a reactive dc magnetron sputtering method, an Ar ion beam bombards and sputters the target, the sputtering current is 150-300mA, the sputtering voltage is 100-400 V, the work pressure of a reaction chamber is 0.45-2.5 Pa, the percentage of the parcial pressure P (O 2 ) = Po 2 / (Po 2 +P Ar ) of the reactive gas O 2 is 4.0 to 10.0%, the sputtering time is 40-100 minutes, thus forming the molybdenum-doped zinc oxide transparent conductive film with a polycrystalline structure. The film thickness is 100-250 nm. The film prepared by the invention is characterized by low resistivity, high visible light range of optical transparency and high carrier mobility. The invention has industrial production prospect and has good technological stability. The invention is a novel method in the preparation of ZMO transparent conductive oxide films and the guarantee of excellent quality of parts produced by films.

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