The invention relates to an organic field-effect transistor technical field, in particular to dual-mode organic field-effect transistor and a relative production. The invention comprises a substrate,a grid electrode, an insulation layer, an insertion semi-conductor layer, a main semi-conductor layer, a source electrode and a drain electrode. The method production comprises that deposing the gridmetal, the insulation layer, the insertion semi-conductor layer, and the organic main semi-conductor material, and testing device. The invention can control the thickness of the insertion semi-conductor to control the property of conductive groove, and realize the synchronous operation of depletion type and strengthen type of one organic field-effect transistor. Compared with other method, the invention can use same art to prepare the organic field-effect transistor with controllable doping semi-conductor groove. The invention can form depletion or dual-mode field-effect transistor in homojunction or heterojunction. The invention can be used for the controllable preparation of organic field-effect transistor, organic semi-conductor logic gate and integrated circuit.