The invention discloses a lateral double diffusion metal oxide semiconductor of a heterogeneous grip multi step field polar plate, which is characterized by the following: equipping with the heterogeneous double-grip structure of the source grip and the leakage grip; composing the multi step field polar plate of the first step field polar plate and the second step field polar plate, connecting with the source grip, the leakage grip, the first step field polar plate and the second step field polar plate orderly; equipping with the source and the leakage in the channel trap section and the trap drift section; equipping with grip oxide layer among the source grip, the leakage grip and the channel trap section, equipping with the trap contact hole in the channel trap section; equipping the field oxide layer among the first step field polar plate, the second step field polar plate and the trap draft section; covering the oxide layer on the multi step field polar plate; making the channel trap section and the trap draft section on the underlay. The invention improves the driving current and the transconductance, which reduces the conducting resistance and the power consumption.