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发明授权
CN101075622B 半导体器件 失效 - 权利终止

半导体器件
摘要：
半导体器件及其制造方法催化元素被添加到非晶半导体膜中并对其进行热处理，从而产生具有良好质量的结晶半导体膜，使用该结晶半导体膜获得具有满意特性的TFT(半导体器件)。半导体层包括含有浓度为1×1019/cm3～1×1021/cm3并且属于元素周期表的15族的杂质元素，和浓度为1.5×1019/cm3～3×1021/cm3且属于元素周期表的13族的杂质元素的一个区域，而且该区域是留在半导体膜(特别是沟道形成区)中的催化元素向其移动的区域。
摘要（英）：

A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1x1019/cm3 to1x1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5x1019/cm3 to 3x1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

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