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发明授权
CN101044259B 等离子体溅射成膜方法和成膜装置 失效 - 权利终止

等离子体溅射成膜方法和成膜装置
摘要：
本发明提供一种利用等离子体使金属靶(56)离子化，产生金属离子，利用偏置电力将金属离子引入到在处理容器内的载置台(20)上载置的被处理体(S)，使金属膜(74)沉积在形成有凹部(2)的被处理体上以填充凹部的方法。设定偏置电力，使得在被处理体表面，因金属离子的引入而产生的金属沉积速率和等离子体溅射蚀刻的蚀刻速率大致均衡。由此，能够向被处理体的凹部填充金属，而不会产生空隙等缺陷。
摘要（英）：

The present invention provides a method for generating metal ions by ionizing a metal target (56) by plasma, pulling the metal ions by bias power to an article S which is to be processed and is mounted on a mounting table (20) in a processing container, and depositing a metal film (74) on the article having a recess (2) thus filling the recess. The bias power is set to realize such a state as themetal deposition rate by pulling of metal ions is substantially balanced with the etching rate of plasma sputter etching on the surface of the article. Consequently, the recess in the article can be filled with metal without causing such a defect as void.

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