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发明授权
CN100590876C 与非型多位非易失性存储器件及其制造方法 失效 - 权利终止

与非型多位非易失性存储器件及其制造方法
摘要：
本发明提供一种NAND型多位非易失性存储器件。该存储器件包括：半导体衬底，其包括体和突出在所述体之上的至少一对鳍；第一绝缘层，其形成在所述成对的鳍之间在所述体上；多个控制栅极电极，其跨过所述第一绝缘层和所述鳍延伸并部分覆盖所述鳍的外壁的上部分；以及多个存储节点，其置于所述控制栅极电极与所述鳍之间并与所述半导体衬底绝缘。所述控制栅极电极顺序成对为两个的组，并且分别包括在相邻对中的相邻控制栅极电极之间的第一距离大于每对的所述控制栅极电极之间的第二距离。
摘要（英）：

A NAND type non-volatile memory device may include: a semiconductor substrate including a body and at least one pair of fins protruding above the body, a first insulation layer may be formed on the body between the at least one pair of fins, a plurality of pairs of control gate electrodes may extend across the first insulation layer and the at least one pair of fins, and may at least partly coverupper portions of outer walls of the at least one pair of fins, and a plurality of storage nodes may be formed between the control gate electrodes and the at least one pair of fins, and may be insulated from the substrate. A first distance between adjacent pairs of control gate electrodes may be greater than a second distance between control gate electrodes in each pair.

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