公开(公告)号：US10242834B2

公开(公告)日：2019-03-26

申请号：US14191729

申请日：2014-02-27

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Wei Gang Chen ,  Feng Du ,  Yue Zhuo

IPC: H02H3/00 ,  H01H83/08 ,  H02H7/28 ,  G01R19/14

Abstract: A method and device are disclosed for determining the direction of current flowing through a circuit breaker. An embodiment includes obtaining a sample value of current flowing through the circuit breaker and a differential value of current; obtaining a sample value of voltage at the circuit breaker; on the basis of a relationship between voltage and current in an equivalent circuit in which the circuit breaker lies at the present time and at a previous time, obtaining an equivalent resistance and an equivalent inductance in the equivalent circuit; if the equivalent resistance and equivalent inductance are both greater than zero, determining that the direction of current flowing through the circuit breaker is the same as the current reference direction, and if the equivalent resistance and equivalent inductance are both less than zero, determining that the direction of current flowing through the circuit breaker is opposite to the current reference direction.

公开(公告)号：US09324530B2

公开(公告)日：2016-04-26

申请号：US13883746

申请日：2011-10-12

Applicant: Michael Gueltig

Inventor： Michael Gueltig

IPC: H01H83/08 ,  H02H11/00 ,  H02J7/00 ,  H03K17/30

CPC classification number: H01H83/08 ,  H02H11/003 ,  H02J7/0034 ,  H03K2017/307

Abstract: A circuit for protecting an electric load against reverse polarity is provided by using a MOSFET (metal oxide semiconductor field-effect transistor), wherein: the circuit is connected on the input side to a voltage supply and on the output side to the load; the source connection of the MOSFET is connected to the voltage supply; the drain connection of the MOSFET is connected to the load; the circuit has dynamic behavior similar to a diode and at the same time low power loss; the gate of the MOSFET is connected to the collector of a first bipolar transistor; the source of the MOSFET is connected to the emitter of the first bipolar transistor; the base of the first bipolar transistor is controlled by a control current; and the control current is derived from the voltage at the drain of the MOSFET.

Abstract translation: 通过使用MOSFET（金属氧化物半导体场效应晶体管）提供用于防止反极性的电负载的电路，其中：电路在输入侧连接到电压源，并在输出侧连接到负载; MOSFET的源极连接到电源; MOSFET的漏极连接到负载; 该电路具有类似于二极管的动态行为，同时具有低功率损耗; MOSFET的栅极连接到第一双极晶体管的集电极; MOSFET的源极连接到第一双极晶体管的发射极; 第一双极晶体管的基极由控制电流控制; 并且控制电流源自MOSFET的漏极处的电压。

公开(公告)号：US2537080A

公开(公告)日：1951-01-09

申请号：US58920445

申请日：1945-04-19

Applicant: PIERCE JOHN B FOUNDATION

Inventor： O'BRIEN JOSEPH F ,  CATALDO JOHN B

IPC: H01H83/08

CPC classification number: H01H83/08

公开(公告)号：US2474029A

公开(公告)日：1949-06-21

申请号：US55826844

申请日：1944-10-11

Applicant: ITE CIRCUIT BREAKER LTD

Inventor： BOHN DONALD I

IPC: H01H83/08 ,  H02H3/02

CPC classification number: H01H83/08 ,  H02H3/021

公开(公告)号：US2404950A

公开(公告)日：1946-07-30

申请号：US45835842

申请日：1942-09-15

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： DICKINSON ROBERT C ,  STUELLEIN WILLIAM H ,  FLORSCHUTZ FRITZ E

IPC: H01H83/08

CPC classification number: H01H83/08

公开(公告)号：US2330101A

公开(公告)日：1943-09-21

申请号：US44321242

申请日：1942-05-16

Applicant: GEN ELECTRIC

Inventor： WINTER FRED H

IPC: B66C15/00 ,  H01H83/08

CPC classification number: H01H83/08 ,  B66C15/00 ,  B66C2700/084 ,  Y10T307/839

公开(公告)号：US1611741A

公开(公告)日：1926-12-21

申请号：US40575120

申请日：1920-08-24

IPC: H01H83/08

CPC classification number: H01H83/08

公开(公告)号：US1323798A

公开(公告)日：1919-12-02

申请号：US21480518

申请日：1918-02-01

Applicant: GEN ELECTRIC

Inventor： TRITLE JOHN F

IPC: H01H50/30 ,  H01H71/24 ,  H01H77/06 ,  H01H77/10 ,  H01H83/08

CPC classification number: H01H77/10 ,  H01H50/305 ,  H01H71/2472 ,  H01H77/06 ,  H01H83/08

公开(公告)号：US11271558B2

公开(公告)日：2022-03-08

申请号：US16985136

申请日：2020-08-04

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Ulisse Lorenzo Lillo ,  Michael Luschin

IPC: H02H3/00 ,  H03K17/082 ,  H03K17/687 ,  H01H83/08 ,  H01H71/04

Abstract: An integrated circuit that may be employed as a smart switch is described herein. The integrated circuit may include a first power transistor coupled between a supply pin and a first output pin and a second power transistor coupled between the supply pin and a second output pin. The first and the second power transistors each having an intrinsic body diode which allows reverse conduction. The integrated circuit further includes a control circuit that is configured to trigger a switch-on and switch-off of the first and the second power transistors based on a first input signal and a second input signal, respectively. Furthermore, the integrated circuit includes a protection circuit configured to detect, for the first and the second power transistors, a transition from a reverse conducting state into a forward conducting state, and vice versa, and to generate an error signal in response to certain detections.

公开(公告)号：US4027223A

公开(公告)日：1977-05-31

申请号：US702433

申请日：1976-07-06

Applicant: Frank G. Renz

Inventor： Frank G. Renz

IPC: H02H11/00 ,  H01H83/08 ,  H02J7/00

CPC classification number: H02H11/002 ,  Y10T307/839

Abstract: A protective device for portable transceivers to assure that improper polarity is not applied to the power input. Two relays, oppositely polarized from each other by use of diodes, sense the applied power polarity and connect that power so that the power applied to the transceivers is always correct.

Abstract translation: 用于便携式收发器的保护装置，以确保不对电源输入施加不正确的极性。 通过使用二极管彼此相反极化的两个继电器感测施加的功率极性并连接该功率，使得施加到收发器的功率总是正确的。