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公开(公告)号：US12237327B2
公开(公告)日：2025-02-25
申请号：US17523816
申请日：2021-11-10
Applicant: pSemi Corporation
Inventor： Shashi Samal , Matt Allison
IPC: H01L27/085 , H01L21/822 , H01L27/02
Abstract: Devices and methods to manufacture a stack of FET switches in presence of a neighboring stack of FET switches are described. The stack of FET switches is designed or manufactured so that at least its top FET has a width that is smaller than the width of its bottom FET. Other voltage handling configurations and distributions of widths are described.
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