公开(公告)号：US20110249149A1

公开(公告)日：2011-10-13

申请号：US13049104

申请日：2011-03-16

Applicant: Yoshihiro ISHIDA

Inventor： Yoshihiro ISHIDA

IPC: H04N5/262

CPC classification number: H04N5/23293 ,  H04N5/23238 ,  H04N5/2628 ,  H04N2101/00

Abstract: An image processing apparatus that includes an image acquiring unit that acquires a plurality of images, a processing unit that creates a plurality of composite images having a sequential relationship based on a predetermined rule using at least a portion of each of the acquired images, and selects a representative image corresponding to the plurality of composite images.

Abstract translation: 一种图像处理装置，包括：图像获取单元，其获取多个图像;处理单元，使用至少一部分所获取的图像，基于预定规则创建具有顺序关系的多个合成图像，并且选择 对应于多个合成图像的代表图像。

公开(公告)号：US20110197813A1

公开(公告)日：2011-08-18

申请号：US13095444

申请日：2011-04-27

Applicant: Yoshihiro ISHIDA ,  Katsushige HARADA ,  Takuya SUGAWARA

Inventor： Yoshihiro ISHIDA ,  Katsushige HARADA ,  Takuya SUGAWARA

IPC: C23C16/52 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/31641 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45546

Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

Abstract translation: 本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序 进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数 表演。