公开(公告)号：US20160097805A1

公开(公告)日：2016-04-07

申请号：US14505240

申请日：2014-10-02

Applicant: Xilinx, Inc

Inventor： Ping-Chin Yeh ,  John K. Jennings ,  Rhesa Nathanael ,  Nui Chong ,  Cheang-Whang Chang ,  Daniel Y. Chung

IPC: G01R31/28

CPC classification number: G01R31/2851 ,  G01R31/2837 ,  G01R31/2843 ,  G01R31/3167

Abstract: In an example implementation, an integrated circuit (IC) includes: a plurality of transistors disposed in a plurality of locations on a die of the IC; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (DAC), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (ADC), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.

Abstract translation: 在示例实现中，集成电路（IC）包括：设置在IC的管芯上的多个位置中的多个晶体管; 耦合到所述多个晶体管中的每一个的端子的导体; 耦合到所述导体的数模转换器（DAC），以响应于数字输入将电压信号驱动到所述多个晶体管; 以及耦合到所述导体的至少一部分的模数转换器（ADC），以响应于所述电压信号而响应于在所述多个晶体管中感应的电流信号而生成样本，所述样本至少指示 一个静电特性用于多个晶体管。

公开(公告)号：US10379155B2

公开(公告)日：2019-08-13

申请号：US14505240

申请日：2014-10-02

Applicant: Xilinx, Inc

Inventor： Ping-Chin Yeh ,  John K. Jennings ,  Rhesa Nathanael ,  Nui Chong ,  Cheang-Whang Chang ,  Daniel Y Chung

IPC: G01R31/28 ,  G01R31/3167

Abstract: In an example implementation, an integrated circuit (IC) includes: a plurality of transistors disposed in a plurality of locations on a die of the IC; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (DAC), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (ADC), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.