公开(公告)号：US10316157B2

公开(公告)日：2019-06-11

申请号：US15544334

申请日：2017-04-26

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Linbo Ke

IPC: B29L7/00 ,  C08J5/18 ,  B29C41/00 ,  B29C41/02 ,  B29C41/46 ,  B29K79/00 ,  C08G73/10

Abstract: Disclosed are a modified polyimide thin film and a manufacturing method thereof applied for colorless transparent flexible display technology. A material of the modified polyimide thin film has a following structural formula: wherein is selected from one of —R2- is selected from one of —O—, n is a degree of polymerization and n is a natural number. The obtained film possesses good heat resistance, excellent colorlessness and flexibility.

公开(公告)号：US20240032349A1

公开(公告)日：2024-01-25

申请号：US17434992

申请日：2021-06-03

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

Inventor： Linbo Ke

IPC: H10K59/126 ,  H01L29/786 ,  H10K59/12 ,  H01L29/66

CPC classification number: H10K59/126 ,  H01L29/78633 ,  H10K59/1201 ,  H01L29/66742

Abstract: The present invention provides an array substrate and a manufacturing method thereof, the array substrate forms a dual U-shaped conductor structure encompassing a first thin film transistor and a second thin film transistor by a first light shielding layer, a second light shielding layer, a first shielding layer, and a second shielding layer to perfectly shield moving charges in the film layer under the thin film transistor and the film layers on two sides of the thin film transistor outside the dual U-shaped conductor structure to keep excellent electrical properties of a device.

公开(公告)号：US12185597B2

公开(公告)日：2024-12-31

申请号：US17434992

申请日：2021-06-03

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

Inventor： Linbo Ke

IPC: H10K59/126 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

Abstract: The present invention provides an array substrate and a manufacturing method thereof, the array substrate forms a dual U-shaped conductor structure encompassing a first thin film transistor and a second thin film transistor by a first light shielding layer, a second light shielding layer, a first shielding layer, and a second shielding layer to perfectly shield moving charges in the film layer under the thin film transistor and the film layers on two sides of the thin film transistor outside the dual U-shaped conductor structure to keep excellent electrical properties of a device.