公开(公告)号：US20240387175A1

公开(公告)日：2024-11-21

申请号：US18628824

申请日：2024-04-08

Applicant: Winbond Electronics Corp.

Inventor： Chungchen Hsu ,  Tsung-Wei Lin ,  Kun-Che Wu

IPC: H01L21/033 ,  H01L21/3213

Abstract: A semiconductor structure includes a substrate and a target pattern. The target pattern is disposed on the substrate. The top-view pattern of the target pattern includes a main portion and a protruding portion. The main portion and the protruding portion are connected with each other along the long axis of the top-view pattern of the target pattern. The protruding portion is connected to the main portion. The protruding portion includes a first portion located on one side of the long axis. The maximum width of the first portion perpendicular to the long axis is less than half of the maximum width of the main portion.

公开(公告)号：US20210225639A1

公开(公告)日：2021-07-22

申请号：US17033695

申请日：2020-09-26

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

IPC: H01L21/027

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

公开(公告)号：US20240297047A1

公开(公告)日：2024-09-05

申请号：US18592416

申请日：2024-02-29

Applicant: Winbond Electronics Corp.

Inventor： Kun-Che Wu ,  Tsung-Wei Lin ,  Chungchen Hsu

IPC: H01L21/308 ,  H01L21/027

CPC classification number: H01L21/3086 ,  H01L21/0274 ,  H01L21/3081

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A substrate is provided. A material layer is formed on the substrate. A first hard mask pattern is formed on the material layer. The top-view pattern of the first hard mask pattern is ring-shaped. The first hard mask pattern has an opening. A second hard mask pattern is formed on the first hard mask pattern. The second hard mask pattern fills the opening. The top-view pattern of the second hard mask pattern is completely located inside the outer contour of the top-view pattern of the first hard mask pattern. The pattern of the first hard mask pattern and the pattern of the second hard mask pattern are transferred to the material layer to form a first target pattern.

公开(公告)号：US11545360B2

公开(公告)日：2023-01-03

申请号：US17033695

申请日：2020-09-26

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

IPC: H01L21/027

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.