公开(公告)号：US20180173018A1

公开(公告)日：2018-06-21

申请号：US15671982

申请日：2017-08-08

Applicant: WUHAN RESEARCH INSTITUTE OF POSTS AND TELECOMMUNICATIONS

Inventor： MIAOFENG LI ,  XI XIAO ,  LEI WANG ,  DAIGAO CHEN ,  QI YANG ,  SHAOHUA YU

IPC: G02F1/01

CPC classification number: G02F1/011 ,  G02F2201/122 ,  G02F2201/127

Abstract: The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers. The present invention can improve parameter design freedom of an electrode and realize effective signal parameter matching.

公开(公告)号：US20180321570A1

公开(公告)日：2018-11-08

申请号：US16063288

申请日：2016-12-07

Applicant: WUHAN RESEARCH INSTITUTE OF POSTS AND TELECOMMUNICATIONS

Inventor： MIAOFENG LI ,  XI XIAO ,  LEI WANG

IPC: G02F1/225 ,  G02F1/01 ,  G02F1/035

CPC classification number: G02F1/2255 ,  G02F1/0121 ,  G02F1/015 ,  G02F1/03 ,  G02F1/0356

Abstract: An integrated electro-optic modulator and a method of improving 3 dB bandwidth thereof by substrate hollowing. The method comprises the steps of: calculating an electric field intensity distribution area on the cross section of a modulation area of the integrated electro-optic modulator (101); taking an overlapping part of the electric field intensity distribution area and a substrate material (10) as a hollowing out area (80) (102); determining a size and positions of hollowing out windows (60) needing to be opened in a buried layer of silicon dioxide (20) over the hollowing out area (80) beside both sides of electrodes (50), and etching out the hollowing out windows (60) (103); and performing a hollowing operation on the hollowing out area (80) via the hollowing out windows (60) (104).