公开(公告)号：US20250159934A1

公开(公告)日：2025-05-15

申请号：US18575287

申请日：2023-11-20

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： SUNG MIN HAN ,  Jianqin LIN

IPC: H01L29/786

Abstract: Disclosed are a transistor structure, a driving substrate and a display panel. The transistor structure includes a substrate, a buffer layer and a transistor, and the buffer layer is disposed on the substrate. The transistor is disposed on a side of the buffer layer away from the substrate. The buffer layer includes a first silicon oxide layer and a second silicon oxide layer stacked on the substrate in sequence. A hydrogen content of the second silicon oxide layer is greater than 4%, and a hydrogen content of the first silicon oxide layer is less than the hydrogen content of the second silicon oxide layer.