公开(公告)号：US20210242350A1

公开(公告)日：2021-08-05

申请号：US16972621

申请日：2019-03-29

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Mingjuan LI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/66

Abstract: The present disclosure provides a thin film transistor, a manufacturing method of the thin film transistor, and a liquid crystal display. The thin film transistor includes a substrate; an active region arranged above the substrate; a channel region arranged in a center of the active region; source and drain regions arranged on two sides of the channel region; a gate dielectric layer arranged above the channel region; a reflective coating arranged above the gate dielectric layer; a gate metal arranged above the reflective coating; an interlayer dielectric layer covering the gate metal, the active region, and the substrate; and a source/drain metal layer passing through the interlayer dielectric layer and electrically connecting with a surface of the source and drain regions.