公开(公告)号：US20230212732A1

公开(公告)日：2023-07-06

申请号：US17965802

申请日：2022-10-14

Applicant: WONIK QNC Corporation

Inventor： Yoonjae YU ,  Seungyoung Oh ,  Eunyoung CHOI ,  Joohee JANG ,  Soyoung CHOI ,  Sanghyun CHO

IPC: C23C8/36 ,  C23C8/06

CPC classification number: C23C8/36 ,  C23C8/06

Abstract: Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

公开(公告)号：US20230131168A1

公开(公告)日：2023-04-27

申请号：US17955561

申请日：2022-09-29

Applicant: WONIK QNC Corporation

Inventor： Yoonjae YU ,  Seungyoung Oh ,  Eunyoung Choi ,  Joohee Jang ,  Soyoung Choi

IPC: C23C8/36 ,  C23C8/08

Abstract: Disclosed are a processing method for fluorination of a fluorination-target component, which may realize high density and high strength by forming a fluoride coating based on atmospheric pressure high-frequency plasma on various components for semiconductor processes and, at the same time, may significantly increase productivity, and in particular, may ensure normal etch rate in a large-area semiconductor fabrication system, and a fluorinated component obtained by the method.

公开(公告)号：US11898254B2

公开(公告)日：2024-02-13

申请号：US17965802

申请日：2022-10-14

Applicant: WONIK QNC Corporation

Inventor： Yoonjae Yu ,  Seungyoung Oh ,  Eunyoung Choi ,  Joohee Jang ,  Soyoung Choi ,  Sanghyun Cho

IPC: C23C8/36 ,  C23C8/06

CPC classification number: C23C8/36 ,  C23C8/06

Abstract: Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.