公开(公告)号：US20240363328A1

公开(公告)日：2024-10-31

申请号：US18637303

申请日：2024-04-16

Applicant: WONIK QNC Corporation

Inventor： Eun Young CHOI ,  Sang Hyun CHO ,  Seung Jin JUNG ,  Joo Hee JANG ,  So Young CHOI ,  Dong Ho SHIN ,  Jong Hwan MUN ,  Min Seob JUNG

IPC: H01L21/02 ,  C23C16/44 ,  H01L21/324

CPC classification number: H01L21/02046 ,  C23C16/4405 ,  H01L21/3245

Abstract: Provided is a method and an apparatus for dry-cleaning an aluminum nitride (AlN) heater for semiconductor fabrication equipment, which may efficiently remove fluorine-containing contaminants generated on the AlN heater during semiconductor fabrication processes, and especially, may effectively and simultaneously remove organic, inorganic metallic, and inorganic contaminants. The method for dry-cleaning an AlN heater for semiconductor fabrication equipment includes steps of: determining a laser to be used for the AlN heater; determining laser control factors required for cleaning the AlN heater with respect to the laser to be used determined in the step of determining the laser to be used; and cleaning the AlN heater by laser irradiation based on the laser control factors determined in the step of determining the laser control factors.