公开(公告)号：US3710205A

公开(公告)日：1973-01-09

申请号：US3710205D

申请日：1971-04-09

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： SWANSON J

IPC: H01L23/29 ,  H01L29/00 ,  H01L11/14 ,  H01L1/10

CPC classification number: H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/049 ,  Y10S148/053 ,  Y10S148/118 ,  Y10S148/12 ,  Y10S148/15 ,  H01L2924/00

Abstract: This disclosure is concerned with electronic components having improved ionic stability. The improved stability is achieved by the doping of silicon oxide films and layers in the component. Suitable doping materials are selected from a group of material having divalent large ionic radii atoms.

Abstract translation: 本公开涉及具有改进的离子稳定性的电子部件。 通过在部件中掺杂氧化硅膜和层来实现改进的稳定性。 合适的掺杂材料选自具有二价的大的离子半径原子的一组材料。