公开(公告)号：US11885746B2

公开(公告)日：2024-01-30

申请号：US17896141

申请日：2022-08-26

申请人： United States Department of Energy

发明人： Dustin McIntyre ,  Daniel Hartzler

IPC分类号： G01N21/71 ,  H01S3/106 ,  H01S3/094 ,  G01N21/31

CPC分类号： G01N21/718 ,  G01N21/31 ,  H01S3/094038 ,  H01S3/094053 ,  H01S3/094096 ,  H01S3/106 ,  G01N2201/0633 ,  G01N2201/0634 ,  G01N2201/0636 ,  G01N2201/06113 ,  G01N2201/08

摘要： One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.

公开(公告)号：US20210119403A1

公开(公告)日：2021-04-22

申请号：US17074162

申请日：2020-10-19

申请人： United States Department of Energy

发明人： Dustin McIntyre ,  Daniel Hartzler

IPC分类号： H01S3/106 ,  H01S3/094 ,  H01S3/11 ,  G01N21/31

摘要： One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.

公开(公告)号：US20220407283A1

公开(公告)日：2022-12-22

申请号：US17896141

申请日：2022-08-26

申请人： United States Department of Energy

发明人： Dustin McIntyre ,  Daniel Hartzler

IPC分类号： H01S3/106 ,  H01S3/094 ,  H01S3/11 ,  G01N21/31

摘要： One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.

公开(公告)号：US11451004B2

公开(公告)日：2022-09-20

申请号：US17074162

申请日：2020-10-19

申请人： United States Department of Energy

发明人： Dustin McIntyre ,  Daniel Hartzler

IPC分类号： G01J3/46 ,  H01S3/106 ,  H01S3/094 ,  H01S3/11 ,  G01N21/31

摘要： One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.