公开(公告)号：US11619837B2

公开(公告)日：2023-04-04

申请号：US16811250

申请日：2020-03-06

申请人： UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

发明人： Debashis Chanda ,  Sayan Chandra

IPC分类号： G02F1/01 ,  G02F1/1524 ,  F41H3/00 ,  G02F1/21 ,  H01Q17/00

摘要： An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.

公开(公告)号：US11217738B2

公开(公告)日：2022-01-04

申请号：US16555449

申请日：2019-08-29

申请人： University of Central Florida Research Foundation, Inc.

发明人： Debashis Chanda ,  Michael Leuenberger ,  Alireza Safaei ,  Sayan Chandra

IPC分类号： H01L35/22 ,  G01J5/18 ,  G01J5/26

摘要： Various methods and devices for ultrasensitive infrared photodetection, infrared imaging, and other optoelectronic applications using the plasmon assisted thermoelectric effect in graphene are described. Infrared detection by the photo-thermoelectric uses the generation of a temperature gradient (ΔT) for the efficient collection of the generated hot-carriers. An asymmetric plasmon-induced hot-carrier Seebeck photodetection scheme at room temperature exhibits a remarkable responsivity along with an ultrafast response in the technologically relevant 8-12 μm band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition (CVD) grown large area nanopatterned monolayer graphene, which leads to a record ΔT across the device terminals thereby enhancing the photo-thermoelectric voltage beyond the theoretical limit for graphene. The results provide a strategy for uncooled, tunable, multispectral infrared detection.