专利检索 ap:("The Hong Kong University of Science AND Technology") AND inv:"Kwang Ting CHENG" 第 1 页

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发明申请
HYBRID MEMRISTOR/FIELD-EFFECT TRANSISTOR MEMORY CELL AND ITS INFORMATION ENCODING SCHEME 审中-公开

公开(公告)号：US20200161373A1

公开(公告)日：2020-05-21

申请号：US16630195

申请日：2018-07-11

申请人： The Hong Kong University of Science and Technology

发明人： Kwang Ting CHENG , Miguel Angel LASTRAS MONTAÑO

IPC分类号： H01L27/24 , G11C13/00

摘要： A resistive random-access memory (ReRAM) includes a hybrid memory cell. The hybrid memory cell includes: (a) a left resistance-switching device comprising a first terminal and a second terminal, (b) a right resistance-switching device comprising a first terminal and a second terminal, wherein the first terminal of the right resistance-switching device is connected to the first terminal of the left-resistive switching device at an internal node, and (c) a transistor comprising a source terminal, a drain terminal, and a gate terminal, wherein the drain terminal of the transistor is connected to the left resistance-switching device and the right resistance-switching device at the internal node.