摘要:
A method for preparing a hierarchical porous ZrO2 includes the following steps: S1, dissolving a triblock copolymer in an organic solvent to obtain a solution A, dissolving a tannin extract in distilled water to obtain a solution B, mixing the solution A and the solution B and stirring to obtain a mixed solution; S2, adding a zirconium salt to the mixed solution obtained in step S1 and stirring; S3, heating the mixed solution obtained in step S2 in an oven to obtain ZrO2, promoting the conversion of the crystal form of ZrO2; S4, calcining ZrO2 at a high temperature to obtain the hierarchical porous ZrO2.
摘要:
The invention relates to a method and device for diagnosing deviations in a single cylinder lambda control in an internal combustion engine having at least two cylinders and an exhaust gas sensor designed as a broadband lambda sensor, wherein a pump current is evaluated by means of a pump cell and said pump current is used at least temporarily for an individual cylinder lambda control. According to the invention, a pump voltage or a pump voltage change is determined via the pump cell in addition to the pump current and said value is transmitted to a diagnosis apparatus. Deviations in the single cylinder lambda control can thus be better diagnosed without additional material expense according to the invention, which provides advantages in particular in respect of tightened rulemaking in on-board diagnosis. A preferred application of the method is the use in internal combustion engines having multi-bank exhaust systems.
摘要:
One embodiment of the invention is a compensation circuit that includes a comparator that is coupled to receive a reference voltage. The compensation circuit can also include a capacitance coupled to receive a feedback voltage associated with an output voltage of a converter. Furthermore, the compensation circuit can include an adjustable resistance that is coupled to the capacitance and to the comparator.
摘要:
The invention teaches a semiconductor circuit for driving an LED in which the current passing through the LED is regulated by adjusting the NMOS Rdson using a series of digital signals. The circuit maintains a high current accuracy over wide range of current changes while keeping a low voltage drop.
摘要:
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.
摘要:
One embodiment of the invention is a compensation circuit that includes a comparator that is coupled to receive a reference voltage. The compensation circuit can also include a capacitance coupled to receive a feedback voltage associated with an output voltage of a converter. Furthermore, the compensation circuit can include an adjustable resistance that is coupled to the capacitance and to the comparator.
摘要:
One embodiment of the invention is a compensation circuit that includes a comparator that is coupled to receive a reference voltage. The compensation circuit can also include a capacitance coupled to receive a feedback voltage associated with an output voltage of a converter. Furthermore, the compensation circuit can include an adjustable resistance that is coupled to the capacitance and to the comparator.
摘要:
A directional coupler has a multi-layered low temperature co-fired ceramic substrate. A circuit line is located on one of the layers and is connected to an input port and an output port. Another circuit line is located on a different layer and is connected to a forward coupled port and a reverse coupled port. The circuit lines are located close to each other such that they are electromagnetically coupled. Ground planes are located on the top and bottom surfaces of the substrate.
摘要:
Disclosed are a method and system for transmitting a network file. The method includes: a client sends to a server a network file request message carrying a first network file identifier, wherein the network file request message is used by the client to request to obtain the current content in the network file from the server, and the first network file identifier is used for indicating the content in the network file obtained by the client; the client receives a differential file from the server, wherein the differential file stores the difference between the current content in the network file and the content in the network file obtained by the client; and the client combines the differential file with the content in the network file obtained by the client to obtain the current content in the network file. The disclosure reduces the transmission traffic and shortens the transmission time.
摘要:
Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).