公开(公告)号：US20100155774A1

公开(公告)日：2010-06-24

申请号：US12342118

申请日：2008-12-23

Applicant: Tang Kuei TSENG ,  Kun Hsien LIN ,  Hsin Chin JIANG

Inventor： Tang Kuei TSENG ,  Kun Hsien LIN ,  Hsin Chin JIANG

IPC: H01L29/747 ,  H01L21/332

CPC classification number: H01L29/87

Abstract: A bidirectional transient voltage suppression device is disclosed. The bi-directional transient voltage suppression device comprises a semiconductor die. The semiconductor die has a multi-layer structure comprising a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type, an epitaxial layer, and five diffused regions. The buried layer and the semiconductor substrate form a first semiconductor junction. The first diffused region of the second conductivity type and the semiconductor substrate form a second semiconductor junction. The fourth diffused region of the first conductivity type and the third diffused region of the second conductivity type form a third semiconductor junction. The fifth diffused region of the first conductivity type and the second diffused region of the second conductivity type form a fourth semiconductor junction.

Abstract translation: 公开了一种双向瞬态电压抑制装置。 双向瞬态电压抑制装置包括半导体管芯。 半导体管芯具有包括第一导电类型的半导体衬底，第二导电类型的掩埋层，外延层和五个扩散区域的多层结构。 掩埋层和半导体衬底形成第一半导体结。 第二导电类型的第一扩散区域和半导体衬底形成第二半导体结。 第一导电类型的第四扩散区域和第二导电类型的第三扩散区域形成第三半导体结。 第一导电类型的第五扩散区域和第二导电类型的第二扩散区域形成第四半导体结。