Nitride semiconductor free-standing substrate and method for making same
    2.
    发明申请
    Nitride semiconductor free-standing substrate and method for making same 有权
    氮化物半导体自支撑衬底及其制造方法

    公开(公告)号:US20090160026A1

    公开(公告)日:2009-06-25

    申请号:US12155759

    申请日:2008-06-09

    IPC分类号: H01L21/20 H01L29/20

    摘要: A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.

    摘要翻译: 氮化物半导体自支撑衬底在平行于衬底的表面和衬底内部的截面中包括氮化物半导体晶体和具有不小于10 / cm 2且不大于600 / cm 2的密度的反转畴。 一种制造氮化物半导体独立基板的方法包括:通过调节氮化物半导体晶体生长步骤,在氮化物半导体晶体生长步骤中,通过调节密度不小于10 / cm 2且不大于600 / 在氮化物半导体晶体的初始生长阶段的生长条件,以及用于从氮化物半导体衬底分离生长的氮化物半导体晶体与分离步骤。

    Group-III nitride semiconductor freestanding substrate and manufacturing method of the same
    3.
    发明授权
    Group-III nitride semiconductor freestanding substrate and manufacturing method of the same 有权
    III族氮化物半导体独立基板及其制造方法

    公开(公告)号:US08102026B2

    公开(公告)日:2012-01-24

    申请号:US12556635

    申请日:2009-09-10

    IPC分类号: H01L29/20

    摘要: To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In this freestanding substrate, preferably value Δσ obtained by dividing a difference between a maximum value of the carrier concentration and a minimum value of the carrier concentration in a surface of the freestanding substrate by the maximum value of the carrier concentration is greater than 0.05, and the carrier concentration in any place in the surface of the freestanding substrate exceeds 5.0×1017 cm−3.

    摘要翻译: 为了提供将n型III族氮化物半导体独立式衬底的周边部分的载流子浓度设定为低于周边部分内部的载流子浓度的III族氮化物半导体自由基板。 在这种独立的底物中,优选的值为& 通过将载体浓度的最大值和独立基板的表面中的载流子浓度的最小值之间的差除以载流子浓度的最大值而得到的值大于0.05,并且载流子浓度在 独立基板的表面超过5.0×1017cm-3。

    GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
    4.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME 有权
    III族氮化物半导体自动基板及其制造方法

    公开(公告)号:US20100258812A1

    公开(公告)日:2010-10-14

    申请号:US12556635

    申请日:2009-09-10

    IPC分类号: H01L29/20 H01L21/20

    摘要: To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In this freestanding substrate, preferably value Δσ obtained by dividing a difference between a maximum value of the carrier concentration and a minimum value of the carrier concentration in a surface of the freestanding substrate by the maximum value of the carrier concentration is greater than 0.05, and the carrier concentration in any place in the surface of the freestanding substrate exceeds 5.0×1017cm−3.

    摘要翻译: 为了提供将n型III族氮化物半导体独立式衬底的周边部分的载流子浓度设定为低于周边部分内部的载流子浓度的III族氮化物半导体自由基板。 在这种独立的底物中,优选值为&D; 通过将载体浓度的最大值和独立基板的表面中的载流子浓度的最小值之间的差除以载流子浓度的最大值而得到的值大于0.05,并且载流子浓度在 独立基板的表面超过5.0×1017cm-3。

    Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method
    8.
    发明授权
    Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method 有权
    多孔基板及其制造方法及其半导体多层基板及其制造方法

    公开(公告)号:US07829913B2

    公开(公告)日:2010-11-09

    申请号:US10519152

    申请日:2003-06-26

    IPC分类号: H01L27/01

    摘要: A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

    摘要翻译: 用于生长半导体的晶体层的衬底的结构,特别是III族氮化物半导体及其制造方法。 基底在基底上包括两个多孔层。 第一多孔激光器(最外层)的孔的平均开口直径小于第二多孔层中比第一多孔层更靠近基底的孔的平均直径。 第一和第二多孔层的体积孔隙率为10〜90%。 多于50%的第一多孔层的孔从第一多孔层的表面延伸并到达第一和第二多孔层之间的界面。 即使通过常规的晶体生长方法,可以容易地在多孔基材上生长低缺陷密度的外延晶体。